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  1995. 1. 23 1/2 semiconductor technical data KTC200 epitaxial planar npn transistor revision no : 0 general purpose application. switching application. features  excellent h fe linearity : h fe (2)=25(min.), (v ce =2v, i c =200ma).  complementary to kta200. maximum rating (ta=25 1 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 2. collector 3. base + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 5 v collector current i c 500 ma emitter current i e -500 ma collector power dissipation p c 625 mw junction temperature t j 150 1 storage temperature range t stg -55  150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =50v, i e =0 - - 0.1  a emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1  a dc current gain h fe (1) (note) v ce =2v, i c =50ma 70 - 240 h fe (2) v ce =2v, i c =200ma 25 - - collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma - - 0.25 v base-emittter voltage v be v ce =2v, i c =200ma - - 1.0 v transition frequency f t v ce =6v, i c =20ma - 300 - mhz collector output capacitance c ob v cb =6v, i e =0, f=1mhz - 7.0 - pf note : h fe classification o:70  140, y:120  240
1995. 1. 23 2/2 KTC200 revision no : 0 i - v cce ce collector-emitter voltage v (v) 01 500 c 0 collector current i (ma) v - i ce(sat) c c collector current i (ma) 0.5 1 0.01 ce(sat) collector-emitter saturation dc current gain h fe 500 1 0.5 collector current i (ma) c c fe h - i collector power dissipation p (mw) 0 c 700 50 25 0 amient temperature ta ( c) pc - ta 23 4 5 100 200 300 400 common emitter ta=25 c i =0.1ma b 1.0ma 2.0ma 3.0ma 4.0ma 5.0ma 0.5ma 0ma 3 5 10 30 50 100 500 50 50 30 300 100 common emitter ta=100 c ta=-25 c ta=25 c v =6v ce ce v =1v 10 base current i ( a) 5 b 2k 0.4 0.2 0 reverse voltage v (v) r be b i - v 0.6 0.8 1.0 30 50 100 300 500 1k common emitter v =2v ce ta=10 0 c ta=25 c ta=-25 c voltage v (v) 3 5 10 30 100 500 0.03 0.05 0.1 0.3 0.5 1 common emitter i /i =10 c b ta=100 c ta=25 c ta=-25 c 75 100 125 150 175 100 200 300 400 500 600


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